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KMM366S1623CTY-GL 数据表(PDF) 7 Page - Samsung semiconductor |
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KMM366S1623CTY-GL 数据表(HTML) 7 Page - Samsung semiconductor |
7 / 11 page PC100 SDRAM MODULE KMM366S1623CTY REV. 0 August 1998 Preliminary REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE. Parameter Symbol -H -L Unit Note Min Max Min Max CLK cycle time CAS latency=3 tCC 10 1000 10 1000 ns 1 CAS latency=2 10 12 CLK to valid output delay CAS latency=3 tSAC 6 6 ns 1,2 CAS latency=2 6 7 Output data hold time CAS latency=3 tOH 3 3 ns 2 CAS latency=2 3 3 CLK high pulse width tCH 3 3 ns 3 CLK low pulse width tCL 3 3 ns 3 Input setup time tSS 2 2 ns 3 Input hold time tSH 1 1 ns 3 CLK to output in Low-Z tSLZ 1 1 ns 2 CLK to output in Hi-Z CAS latency=3 tSHZ 6 6 ns CAS latency=2 6 7 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter. Notes : AC CHARACTERISTICS (AC operating conditions unless otherwise noted) |
类似零件编号 - KMM366S1623CTY-GL |
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类似说明 - KMM366S1623CTY-GL |
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