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2SJ280L 数据表(PDF) 8 Page - Hitachi Semiconductor |
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2SJ280L 数据表(HTML) 8 Page - Hitachi Semiconductor |
8 / 8 page Application High speed power switching Features • Low on–resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings TO–220AB 1 2 3 1. Gate 2. Drain 3. Source 1 2 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ———————————————————————————————————————————– Drain to source voltage VDSS –60 V ———————————————————————————————————————————– Gate to source voltage VGSS ±20 V ———————————————————————————————————————————– Drain current ID –15 A ———————————————————————————————————————————– Drain peak current ID(pulse)* –60 A ———————————————————————————————————————————– Body–drain diode reverse drain current IDR –15 A ———————————————————————————————————————————– Avalanche current IAP*** –15 A ———————————————————————————————————————————– Avalanche energy EAR*** 19 mJ ———————————————————————————————————————————– Channel dissipation Pch** 50 W ———————————————————————————————————————————– Channel temperature Tch 150 °C ———————————————————————————————————————————– Storage temperature Tstg –55 to +150 °C ———————————————————————————————————————————– * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 2SJ290 Silicon P-Channel MOS FET |
类似零件编号 - 2SJ280L |
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类似说明 - 2SJ280L |
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