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2SJ280L 数据表(PDF) 4 Page - Hitachi Semiconductor |
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2SJ280L 数据表(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page Drain-Source Saturation Voltage vs. Gate-Source Voltage 0 –2–4 –6–8 –10 –0.4 –0.8 –1.2 –1.6 –2.0 Gate to Source Voltage V (V) GS Pulse Test –20 A –10 A I = –30 A D Static Drain-Source on State Resistance vs. Drain Current –2 –5 –10 –20 –50 –100 –200 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Drain Current I (A) D –10 V V = –4 V GS Static Drain-Source on State Resistance vs. Temperature Case Temperature T (°C) C 0.1 0.08 0.06 0.04 0.02 –40 0 40 80 120 160 Pulse test –10 V I = –30 A D V = –4 V GS I = –30 A D –10 A, –20 A –10 A, –20 A 0 Forward Transfer Admittance vs. Drain Current 100 50 20 10 5 2 1 –0.5 –1 –2 –5 –20 –50 –10 Drain Current I (A) D Tc = 25°C –25°C Pulse Test V = –10 V DS 75°C 2SJ280 L , 2SJ280 S |
类似零件编号 - 2SJ280L |
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类似说明 - 2SJ280L |
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