2SJ245S datasheet(1/7 Pages) HITACHI

部件名	2SJ245S

功能描述	SILICON P-CHANNEL MOS FET

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制造商	HITACHI [Hitachi Semiconductor]

网页	http://www.renesas.com/eng

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Application

High speed power switching

Features

• Low on–resistance

• High speed switching

• Low drive current

• 4 V Gate drive device can be driven

from 5 V source

• Suitable for Switching regulator, DC – DC

converter

1

2, 4

3

DPAK–1

4

3

2

1

4

3

2

1

1. Gate

2. Drain

3. Source

4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

VDSS

–60

V

———————————————————————————————————————————

Gate to source voltage

VGSS

±20

V

———————————————————————————————————————————

Drain current

ID

–5

A

———————————————————————————————————————————

Drain peak current

ID(pulse)*

–20

A

———————————————————————————————————————————

Body–drain diode reverse drain current

IDR

–5

A

———————————————————————————————————————————

Channel dissipation

Pch**

20

W

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

*

PW

≤ 10 µs, duty cycle ≤ 1 %

**

Value at Tc=25°C

2SJ245 L , 2SJ245 S

SILICON P-CHANNEL MOS FET

类似零件编号 - 2SJ245S

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	2SJ245S	989Kb / 8P	P-Channel 60-V (D-S) MOSFET

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