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STGP7NB60FD 数据表(PDF) 3 Page - STMicroelectronics |
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STGP7NB60FD 数据表(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STGP7NB60FD - STGB7NB60FD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC SWITCHING ON SWITCHING OFF COLLECTOR-EMITTER DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VCE =25 V,Ic= 7A 6S Cies Input Capacitance VCE =25V,f=1 MHz,VGE =0 540 pF Coes Output Capacitance 80 pF Cres Reverse Transfer Capacitance 13 pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE =480V, IC =7 A, VGE = 15V 37 4 18 50 nC nC nC ICL Latching Current Vclamp = 480 V Tj = 125°C , RG =10 Ω 28 A Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VCC = 480 V, IC = 7ARG =10Ω , VGE =15 V 17 6 ns ns (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC =7 ARG=10Ω VGE = 15 V,Tj =125°C 890 59 A/µs µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit tc Cross-over Time Vcc = 480 V, IC =7 A, RG =10 Ω ,VGE =15 V 190 ns tr(Voff) Off Voltage Rise Time 45 ns td(off) Delay Time 107 ns tf Fall Time 140 ns Eoff(**) Turn-off Switching Loss 240 µJ Ets Total Switching Loss 300 µJ tc Cross-over Time Vcc = 480 V, IC =7 A, RG =10 Ω ,VGE =15 V Tj = 125 °C 410 ns tr(Voff) Off Voltage Rise Time 195 ns td(off) Delay Time 204 ns tf Fall Time 650 ns Eoff(**) Turn-off Switching Loss 565 µJ Ets Total Switching Loss 625 µJ Symbol Parameter Test Conditions Min. Typ. Max. Unit If Ifm Forward Current Forward Current pulsed 7 56 A A Vf Forward On-Voltage If = 3.5 A If = 3.5 A, Tj = 125 °C 1.4 1.1 1.9 V V trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 7A,VR =40V, Tj =125°C, di/dt = 100 A/ µs 50 70 2.7 ns nC A |
类似零件编号 - STGP7NB60FD |
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类似说明 - STGP7NB60FD |
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