STF20NM60D datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STF20NM60D

功能描述	N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

Download	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 15 page

STF20NM60D - STP20NM60FD - STW20NM60FD

Electrical ratings

3/15

1

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

TO-247

VDS

Drain-source voltage (VGS = 0)

600

V

VDGR

Drain-gate voltage (RGS = 20 kΩ)600

V

VGS

Gate- source voltage

± 30

V

ID

Drain current (continuous) at TC = 25°C

20

20 (1)

1.

Limited only by maximum temperature allowed

20

A

ID

Drain current (continuous) at TC = 100°C

12.6

12.6 (1)

12.6

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

80

80 (1)

80

A

PTOT

Total dissipation at TC = 25°C

192

45

214

W

Derating factor

1.20

0.36

1.42

W/°C

dv/dt (3)

3.

ISD < 20A, di/dt < 400A/µs, VDD = 80%V(BR)DSS

Peak diode recovery voltage slope

20

V/ns

VISO

Insulation withstand voltage (DC)

-

2500

-

V

Tj

Tstg

Operating junction temperature

Storage temperature

– 65 to 150

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

TO-220

TO-220FP

TO-247

Rthj-case Thermal resistance junction-case Max

0.65

2.8

0.585

°C/W

Rthj-amb Thermal resistance junction-ambient Max

62.5

30

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 3.

Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

10

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 35 V)

700

mJ

类似零件编号 - STF20NM60D

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	STF20NM60D	294Kb / 2P	isc N-Channel Mosfet Transistor

More results

类似说明 - STF20NM60D

制造商	部件名	数据表	功能描述
STMicroelectronics	STF20NM50D	494Kb / 11P	N-CHANNEL 500V - 0.22W - 20A TO-220/TO-220FP/D2PAK FDmesh??Power MOSFET (with FAST DIODE)
	STW20NM60	256Kb / 8P	N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh?줡ower MOSFET
	STW20NM50FD	248Kb / 8P	N-CHANNEL 500V - 0.22ohm - 20A TO-247 FDmesh??Power MOSFET with FAST DIODE
	STB11NM60FD	495Kb / 17P	N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)
	STP20NM50FD	276Kb / 9P	N-CHANNEL 500V - 0.22ohm - 20A TO-220/I2PAK FDmesh??Power MOSFET with FAST DIODE
	STX23NM60ND	820Kb / 18P	N-channel 600 V, 0.150 廓, 19.5 A, FDmesh??II Power MOSFET (with fast diode) D짼PAK, I짼PAK, TO-220, TO-220FP, TO-247
	STX30NM60ND	798Kb / 18P	N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
	STF30NM60ND	289Kb / 15P	N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)
	STW34NM60ND	1Mb / 22P	N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
	STF10NM60ND	1Mb / 19P	N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode) November 2011 Rev 2