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STB12NK80ZT4 数据表(PDF) 2 Page - STMicroelectronics |
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STB12NK80ZT4 数据表(HTML) 2 Page - STMicroelectronics |
2 / 15 page 1 Electrical ratings STB12NK80Z - STP12NK80Z - STW12NK80Z 2/15 1 Electrical ratings Table 1. Absolute maximum ratings Table 2. Thermal data Table 3. Avalanche characteristics Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS = 0) 800 V VDGR Drain-gate Voltage (RGS = 20kΩ) 800 V VGS Gate-Source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 10.5 A ID Drain Current (continuous) at TC = 100°C 6.6 A IDM Note 2 Drain Current (pulsed) 42 A PTOT Total Dissipation at TC = 25°C 190 W Derating Factor 1.51 W/°C Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k Ω) 6000 V dv/dt Note 1 Peak Diode Recovery voltage slope 4.5 V/ns Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C TO-220/D²PAK TO-247 Unit Rthj-case Thermal Resistance Junction-case Max 0.66 °C/W Rthj-amb Thermal Resistance Junction-amb Max 62.5 50 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) 10.5 A EAS Single Pulse Avalanche Energy (starting Tj=25°C, ID=IAR, VDD= 50V) 400 mJ |
类似零件编号 - STB12NK80ZT4 |
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类似说明 - STB12NK80ZT4 |
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