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KFW2G16U2M-DED6 数据表(PDF) 4 Page - Samsung semiconductor |
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KFW2G16U2M-DED6 数据表(HTML) 4 Page - Samsung semiconductor |
4 / 125 page OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY 4 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND4G(KFW4G16Q2M-DEB5) Revision History Revision No. 1.0 1.1 Remark Final Final Draft Date May. 17, 2005 Jul. 20, 2005 History 1. Corrected the errata 2. Added DFS restriction to Multi Block Erase. 3. Added Data Protection flow chart. 4. Removed Cache Read Operation. 5. Added additional information on command register. 6. Revised Interrupt status register information. 7. Added INT pin schematic. 8. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us. 9. Revised ECC Bypass description 10. Revised AC/DC parameters 11. Revised Reset Parameters and Timing Diagrams. 1. Corrected the errata 2. Deleted 2.65V/3.3V Device Descriptions. 3. Revised Data Protection Flow Chart. 4. Revised Invalid Block Table Creation Flow Chart. 5. Revised Multi Block Erase Description |
类似零件编号 - KFW2G16U2M-DED6 |
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类似说明 - KFW2G16U2M-DED6 |
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