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KFG2G16U2M-DED6 数据表(PDF) 10 Page - Samsung semiconductor |
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KFG2G16U2M-DED6 数据表(HTML) 10 Page - Samsung semiconductor |
10 / 125 page OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY 10 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND4G(KFW4G16Q2M-DEB5) B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error Correction Code Calculated ECC ECC that has been calculated during a load or program access Written ECC ECC that has been stored as data in the NAND Flash array or in the BufferRAM BufferRAM On-chip internal buffer consisting of BootRAM and DataRAM BootRAM A 1KB portion of the BufferRAM reserved for Boot Code buffering DataRAM A 4KB portion of the BufferRAM reserved for Data buffering Sector Part of a Page ; 512B for the main data area and 16B for the spare area. It is also the minimum Load/Program/Copy-Back Program unit during a 1~4 sector operation is available. Data unit Possible data unit to be read from memory to BufferRAM or to be programmed to memory. - 528B of which 512B is in main area and 16B in spare area - 1056B of which 1024B is in main area and 32B in spare area - 1584B of which 1536B is in main area and 48B in spare area - 2112B of which 2048B is in main area and 64B in spare area 2.2 Definitions |
类似零件编号 - KFG2G16U2M-DED6 |
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类似说明 - KFG2G16U2M-DED6 |
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