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FDS8880 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FDS8880 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page FDS8880 Rev. A1 www.fairchildsemi.com 3 Switching Characteristics (V GS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 12.8A, VDD = 30V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3: RθJA is measured with 1.0 in 2 copper on FR-4 board 4: FDS8880_NL is lead free product. FDS8880_NL marking will appear on the reel label. tON Turn-On Time VDD = 15V, ID = 11.6A VGS = 10V, RGS = 11Ω -- 51 ns td(ON) Turn-On Delay Time - 7 - ns tr Rise Time - 27 - ns td(OFF) Turn-Off Delay Time - 38 - ns tf Fall Time - 15 - ns tOFF Turn-Off Time - - 80 ns VSD Source to Drain Diode Voltage ISD = 11.6A - - 1.25 V ISD = 2.1A - - 1.0 V trr Reverse Recovery Time ISD = 11.6A, dISD/dt=100A/µs- - 30 ns QRR Reverse Recovered Charge ISD = 11.6A, dISD/dt=100A/µs- - 20 nC |
类似零件编号 - FDS8880 |
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类似说明 - FDS8880 |
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