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BAP63-05W 数据表(PDF) 2 Page - NXP Semiconductors |
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BAP63-05W 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2001 May 18 2 Philips Semiconductors Product specification Silicon PIN diode BAP63-05W FEATURES • High speed switching for RF signals • Low diode capacitance • Low diode forward resistance • Low series inductance • For applications up to 3 GHz. APPLICATIONS • RF attenuators and switches. DESCRIPTION Two planar PIN diodes in common cathode configuration in a SOT323 small SMD plastic package. PINNING PIN DESCRIPTION 1 anode (a1) 2 anode (a2) 3 common cathode handbook, halfpage 3 2 1 Top view MAM382 2 1 3 Marking code: W9-. Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 50 V IF continuous forward current − 100 mA Ptot total power dissipation Ts ≤ 90 °C − 240 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C |
类似零件编号 - BAP63-05W |
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类似说明 - BAP63-05W |
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