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BTS3035EJ 数据表(PDF) 17 Page - Infineon Technologies AG

部件名 BTS3035EJ
功能描述  Smart Low-Side Power Switch
Download  45 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

BTS3035EJ 数据表(HTML) 17 Page - Infineon Technologies AG

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Datasheet
17
Rev. 1.0
2016-09-12
HITFET - BTS3035EJ
Smart Low-Side Power Switch
Power Stage
In this situation the load is driven by a current through the intrinsic body diode of the BTS3035EJ. During
Reverse Battery all protection functions like current limitation, over temperature shut down and over voltage
clamping are not available.
The device is dissipating a power loss which is defined by the driven current and the voltage drop on the DMOS
reverse body diode “-VOUT”.
5.5
Inverse Current capability
An inverse current situation means the OUT pin is pulled below GND potential by a current flowing from GND
to OUT (for example in half-bridge configuration and inductive load using freewheeling via the low side path).
In this situation the load is driven by a current through the intrinsic body diode (device off) of the BTS3035EJ.
During Inverse operation all protection functions like current limitation, over temperature shut down and over
voltage clamping are not available.
The device is dissipating a power loss which is defined by the driven current and the voltage drop on the DMOS
reverse body diode “-VOUT”.
Input current behavior during inverse condition on Output
Please note that during inverse current on drain an increased input current can flow ( IIN(-VOUT)). To limit this
current it is needed to place a resistor (RIN) in line with the input, also to prevent the microcontroller I/O pins
from latching up in this case. The value of this resistor is a compromise of input voltage level in normal
operation and maximum allowed device input current IIN or I/O current (for example of microcontroller).
(5.3)
with IIN(max) = 2 mA (see also “Absolute Maximum Ratings” on Page 8) allow for the device;
VOHµC(max) maximum high level voltage of the control signal (microcontroller I/O)
and assuming -VOUT = 1.1 V (worst case) in inverse condition on the output
If inverse current occurs while the STATUS is active (LOW), the STATUS will be reset (HIGH) after the inverse
current disappears.
5.6
Characteristics
Please see “Power Stage” on Page 14 for electrical characteristic table.
(max)
(max)
(min)
IN
OHuC
IN
I
V
R
=


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