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GS74108TP-12 数据表(PDF) 5 Page - List of Unclassifed Manufacturers

部件名 GS74108TP-12
功能描述  512K x 8 4Mb Asynchronous SRAM
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制造商  ETC [List of Unclassifed Manufacturers]
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标志 ETC - List of Unclassifed Manufacturers

GS74108TP-12 数据表(HTML) 5 Page - List of Unclassifed Manufacturers

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Rev: 1.06 7/2000
5/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
AC Test Conditions
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70°C
-40 to 85°C
8ns
10ns
12ns
15ns
10ns
12ns
15ns
Operating
Supply
Current
IDD
CE
≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
150mA 125mA 110mA
90mA
135mA 120mA 100mA
Standby
Current
ISB1
CE
≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
70mA
65mA
60mA
55mA
75mA
70mA
65mA
Standby
Current
ISB2
CE
≥ VDD - 0.2V
All other inputs
≥ VDD - 0.2V or ≤ 0.2V
30mA
40mA
DQ
VT=1.4V
50
30pF1
DQ
3.3V
Output Load 1
Output Load 2
589
434
5pF1
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ.
Parameter
Conditions
Input high level
VIH=2.4V
Input low level
VIL=0.4V
Input rise time
tr=1V/ns
Input fall time
tf=1V/ns
Input reference level
1.4V
Output reference level
1.4V
Output load
Fig. 1& 2


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