数据搜索系统,热门电子元器件搜索 |
|
NZT753 数据表(PDF) 1 Page - Fairchild Semiconductor |
|
NZT753 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2003 Fairchild Semiconductor Corporation Rev. A, April 2003 Absolute Maximum Ratings* T A=25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 °C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T A=25°C unless otherwise noted *Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics * T A=25°C unless otherwise noted * Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min 6cm2. Symbol Parameter Value Units VCEO Collector-Emitter Voltage - 100 V VCBO Collector-Base Voltage - 120 V VEBO Emitter-Base Voltage - 5.0 V IC Collector Current - Continuous - 4.0 A TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ +150 °C Symbol Parameter Test Conditions Min. Max. Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -100 V BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE = 0 -120 V BVEBO Emitter-Base Breakdown Voltage IE = -100µA, IC = 0 -5.0 V ICBO Collector-Base Cutoff Current VCB = -100V, IE = 0 TA = 100°C -0.1 -10 µA µA IEBO Emitter-Base Cutoff Current VEB = -4V, IC = 0 -0.1 µA On Characteristics * hFE DC Current Gain VCE = -2.0V, IC = -50mA VCE = -2.0V, IC = -500mA VCE = -2.0V, IC = -1.0A 70 100 55 300 VCE(sat) Collector-Emitter Saturation Voltage IC = -1.0A, IC = -50mA -0.3 V VBE(sat) Base-Emitter Saturation Voltage IC = -1.0A, IB = -100mA -1.25 V VBE(on) Base-Emitter On Voltage VCE = -2.0V, IC = -1.0A, -1.0 V Small Signal Characteristics fT Transition Frequency VCE = -5V, IC = -100mA, f = 100MHz 75 MHz Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25C 1.2 9.7 W mW/ °C RθJA Thermal Resistance, Junction to Ambient 103 °C/W NZT753 PNP Current Driver Transistor • This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. SOT-223 1 2 4 3 1. Base 2. Collector 3. Emitter |
类似零件编号 - NZT753 |
|
类似说明 - NZT753 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |