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FMG2G300LS60E 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FMG2G300LS60E 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page ©2004 Fairchild Semiconductor Corporation FMG2G300LS60E Rev. A 0 . 0 0 . 4 0 . 8 1 . 2 1 . 6 2 . 0 2 . 4 2 . 8 0 1 0 0 2 0 0 3 0 0 4 0 0 F o r w a r d V o l t a g e , V F [ V ] Common Cathode V GE = 0V T C = 25℃ T C = 125 ℃ 0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 5 1 0 1 0 0 2 0 0 t rr Common Cathode di/dt = 600A/㎲ T C = 25℃ T C = 100℃ I rr F o r w a r d C u r r e n t , I F [ A ] 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 0 3 6 9 1 2 1 5 Common Emitter I C = 300A V CC = 300V T C = 25 oC G a t e C h a r g e , Q g [ n C ] 1 0 2 0 3 0 4 0 5 0 1 0 1 0 0 1 0 0 0 E o n E o f f G a t e R e s i s t a n c e , R G [ Ω ] Common Emitter V CC = 300V, VGE = ± 15V Ic = 300A T C = 25℃℃℃ T C = 125 ------ ℃ Fig 7. Switching Loss vs. Gate Resistance Fig 8. Gate Charge Characteristics Fig 9. Forward Characteristics (diode) Fig 10. Reverse Recovery Characteristics(diode) |
类似零件编号 - FMG2G300LS60E |
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类似说明 - FMG2G300LS60E |
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