SI3585DV datasheet(2/7 Pages) VAISH

部件名	SI3585DV

功能描述	N- and P-Channel 20-V (D-S) MOSFET

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制造商	VAISH [Vaishali Semiconductor]

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Si3585DV

Vishay Siliconix

www.vishay.com

2

Document Number: 71184

S-03512—Rev. B, 04-Apr-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

VDS = VGS, ID = 250 mA

N-Ch

0.6

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = –250 mA

P-Ch

–0.5

V

"

N-Ch

"100

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

P-Ch

"100

nA

VDS = 16 V, VGS = 0 V

N-Ch

1

VDS = –16 V, VGS = 0 V

P-Ch

–1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V, TJ = 55_C

N-Ch

5

mA

VDS = –16 V, VGS = 0 V, TJ = 55_C

P-Ch

–5

VDS w 5 V, VGS = 4.5 V

N-Ch

5

On-State Drain Currenta

ID(on)

VDS p –5 V, VGS = –4.5 V

P-Ch

–5

A

VGS = 4.5 V, ID = 2.4 A

N-Ch

0.100

0.125

VGS = –4.5 V, ID = –1.8 A

P-Ch

0.160

0.200

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 1.8 A

N-Ch

0.160

0.200

W

VGS = –2.5 V, ID = –1.2 A

P-Ch

0.280

0.340

VDS = 5 V, ID = 2.4 A

N-Ch

5

Forward Transconductancea

gfs

VDS = –5 V, ID = –1.8 A

P-Ch

3.6

S

IS = 1.05 A, VGS = 0 V

N-Ch

0.80

1.10

Diode Forward Voltagea

VSD

IS = –1.05 A, VGS = 0 V

P-Ch

–0.83

–1.10

V

Dynamicb

N-Ch

2.1

3.2

Total Gate Charge

Qg

N-Channel

P-Ch

2.7

4.0

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 2.4 A

N-Ch

0.3

Gate-Source Charge

Qgs

P-Channel

P-Ch

0.4

nC

VDS = –10 V, VGS = –4.5 V, ID = –1.8 A

N-Ch

0.4

Gate-Drain Charge

Qgd

P-Ch

0.6

N-Ch

10

17

Turn-On Delay Time

td(on)

P-Ch

11

17

N-Channel

W

N-Ch

30

50

Rise Time

tr

VDD = 10 V, RL = 10 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

P-Ch

34

50

P-Channel

W

N-Ch

14

25

Turn-Off Delay Time

td(off)

P-Channel

VDD = –10 V, RL = 10 W

I

^ –1 A, V

= –4.5 V, R = 6

W

P-Ch

19

30

ns

ID ^ –1 A, VGEN = –4.5 V, RG = 6 W

N-Ch

6

12

Fall Time

tf

P-Ch

24

36

Source-Drain

IF = 1.05 A, di/dt = 100 A/ms

N-Ch

30

50

Source-Drain

Reverse Recovery Time

trr

IF = –1.05 A, di/dt = 100 A/ms

P-Ch

20

40

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

类似零件编号 - SI3585DV

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI3585DV	133Kb / 8P	N- and P-Channel 20-V (D-S) MOSFET Rev. D, 02-Nov-09
Vishay Siliconix	SI3585DV	132Kb / 8P	N- and P-Channel 20-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI3585DV-T1-E3	597Kb / 10P	N- and P-Channel 20V (D-S) MOSFET
VBsemi Electronics Co.,...	SI3585DV-T1-GE3	1Mb / 10P	N- and P-Channel V (D-S) MOSFET
Vishay Siliconix	SI3585DV	132Kb / 8P	N- and P-Channel 20-V (D-S) MOSFET 01-Jan-2022

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类似说明 - SI3585DV

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI3588DV	59Kb / 7P	N- and P-Channel 20-V (D-S) MOSFET Rev. A, 23-Oct-00
	SI3586DV	362Kb / 4P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 16-May-05
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	SI3586DV	212Kb / 13P	N- and P-Channel 20-V (D-S) MOSFET Rev. D, 12-Oct-09
	SI4511DY	77Kb / 8P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 09-Aug-04
	SI5509DC	134Kb / 12P	N- and P-Channel 20-V (D-S) MOSFET Rev. A, 20-Mar-06
	SI5515CDC	276Kb / 16P	N- and P-Channel 20 V (D-S) MOSFET Rev. B, 08-Mar-10
	SIA519EDJ	275Kb / 14P	N- and P-Channel 20-V (D-S) MOSFET Rev. B, 14-Dec-09
	SI4511DY	142Kb / 9P	N- and P-Channel 20-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	AO7600	1Mb / 9P	N- and P- Channel 20 V (D-S) MOSFET

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SI3585DV 数据表(PDF) 2 Page - Vaishali Semiconductor

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SI3585DV 数据表(PDF) 2 Page - Vaishali Semiconductor

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