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AM29DL640D120WHE 数据表(PDF) 2 Page - Advanced Micro Devices

部件名 AM29DL640D120WHE
功能描述  64 Megabit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29DL640D120WHE 数据表(HTML) 2 Page - Advanced Micro Devices

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Publication# 23695
Rev: C Amendment/1
Issue Date: October 7, 2004
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DL640D
64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■ Flexible BankTM architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
■ Boot Sectors
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
■ Manufactured on 0.23 µm process technology
■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte
sector
Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
Customer lockable: Can be read or programmed just
like other sectors. Once locked, data cannot be
changed
■ Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PACKAGE OPTIONS
■ 63-ball Fine Pitch BGA
■ 48-pin TSOP
PERFORMANCE CHARACTERISTICS
■ High performance
— Access time as fast as 90 ns
— Program time: 4 µs/word typical utilizing Accelerate
function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
■ Minimum 1 million erase cycles guaranteed per
sector
■ 20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■ Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■ Supports Common Flash Memory Interface (CFI)
■ Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow
programming/erasing in same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■ WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1,
140, and 141, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
■ Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifica-
tions and ordering information. For new designs involving Fine-pitch BGA (FBGA) packages, S29PL064J supersedes Am29DL640D and is the factory-recommended migration path. Please
refer to the S29PL064J Datasheet for specifications and ordering information.


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