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AM29DL640D120WHE 数据表(PDF) 2 Page - Advanced Micro Devices |
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AM29DL640D120WHE 数据表(HTML) 2 Page - Advanced Micro Devices |
2 / 54 page Publication# 23695 Rev: C Amendment/1 Issue Date: October 7, 2004 Refer to AMD’s Website (www.amd.com) for the latest information. Am29DL640D 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank. — Zero latency between read and write operations ■ Flexible BankTM architecture — Read may occur in any of the three banks not being written or erased. — Four banks may be grouped by customer to achieve desired bank divisions. ■ Boot Sectors — Top and bottom boot sectors in the same device — Any combination of sectors can be erased ■ Manufactured on 0.23 µm process technology ■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector — Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. ExpressFlash option allows entire sector to be available for factory-secured data — Customer lockable: Can be read or programmed just like other sectors. Once locked, data cannot be changed ■ Zero Power Operation — Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero. ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard PACKAGE OPTIONS ■ 63-ball Fine Pitch BGA ■ 48-pin TSOP PERFORMANCE CHARACTERISTICS ■ High performance — Access time as fast as 90 ns — Program time: 4 µs/word typical utilizing Accelerate function ■ Ultra low power consumption (typical values) — 2 mA active read current at 1 MHz — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode ■ Minimum 1 million erase cycles guaranteed per sector ■ 20 year data retention at 125°C — Reliable operation for the life of the system SOFTWARE FEATURES ■ Data Management Software (DMS) — AMD-supplied software manages data programming, enabling EEPROM emulation — Eases historical sector erase flash limitations ■ Supports Common Flash Memory Interface (CFI) ■ Program/Erase Suspend/Erase Resume — Suspends program/erase operations to allow programming/erasing in same bank ■ Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences HARDWARE FEATURES ■ Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion ■ Hardware reset pin (RESET#) — Hardware method of resetting the internal state machine to the read mode ■ WP#/ACC input pin — Write protect (WP#) function protects sectors 0, 1, 140, and 141, regardless of sector protect status — Acceleration (ACC) function accelerates program timing ■ Sector protection — Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector — Temporary Sector Unprotect allows changing data in protected sectors in-system For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifica- tions and ordering information. For new designs involving Fine-pitch BGA (FBGA) packages, S29PL064J supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29PL064J Datasheet for specifications and ordering information. |
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类似说明 - AM29DL640D120WHE |
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