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TPD4102K 数据表(PDF) 11 Page - Toshiba Semiconductor |
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TPD4102K 数据表(HTML) 11 Page - Toshiba Semiconductor |
11 / 28 page TPD4102K 2002-12-18 11 Description of Protection Function (1) Over current protection The IC incorporates the over current protection circuit to protect itself against over current at startup or when a motor is locked. This protection function detects voltage generated in the current detection resistor connected to the IS pin. When this voltage exceeds VR = 0.5 V (typ.), the high-side IGBT output, which is on, temporarily shuts down after a mask period (approx. 2.3 ms), preventing any additional current from flowing to the IC. The next PWM ON signal releases the shutdown state. (2) Under voltage protection The IC incorporates the under voltage protection circuit to prevent the IGBT from operating in unsaturated mode when the VCC voltage or the VBS voltage drops. When the VCC power supply falls to the IC internal setting (VCCUVD = 11 V typ.), all IGBT outputs shut down regardless of the input. This protection function has hysteresis. When the VCCUVR (= 11.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IC is automatically restored and the IGBT is turned on again by the input. When the VBS supply voltage drops (VBSUVD = 10 V typ.), the high-side IGBT output shuts down. When the VBSUVR (= 10.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is turned on again by the input signal. (3) Thermal shutdown The IC incorporates the thermal shutdown circuit to protect itself against the abnormal state when its temperature rises excessively. When the temperature of this chip rises due to external causes or internal heat generation and the internal setting TSD reaches 165°C, all IGBT outputs shut down regardless of the input. This protection function has hysteresis (DTSD = 20°C typ.). When the chip temperature falls to TSD - DTSD, the chip is automatically restored and the IGBT is turned on again by the input. Because the chip contains just one temperature detection location, when the chip heats up due to the IGBT, for example, the differences in distance from the detection location in the IGBT (the source of the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip may rise higher than the thermal shutdown temperature when the circuit started to operate. Duty ON Over current setting value PWM reference voltage Duty OFF tOFF tON tON Mask period + tOFF Over current shutdown Retry Triangle wave Output current |
类似零件编号 - TPD4102K |
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类似说明 - TPD4102K |
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