SI7820DN datasheet(1/5 Pages) VISHAY

部件名	SI7820DN

功能描述	N-Channel 200-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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FEATURES

D PWM-Optimized TrenchFETr Power MOSFET

D 100% Rg Tested

D Avalanche Tested

APPLICATIONS

D Primary Side Switch

− Telecom Power Supplies

− Distributed Power Architectures

− Miniature Power Modules

Si7820DN

Vishay Siliconix

New Product

Document Number: 72581

S-32411—Rev. B, 24-Nov-03

www.vishay.com

1

N-Channel 200-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

200

0.240 @ VGS = 10 V

2.6

200

0.250 @ VGS = 6 V

2.5

1

2

3

4

5

6

7

8

S

G

D

3.30 mm

PowerPAK 1212-8

Bottom View

N-Channel MOSFET

G

D

S

Ordering Information: Si7820DN-T1—E3

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

2.6

1.7

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

2.1

1.3

A

Pulsed Drain Current

IDM

10

A

Continuous Source Current (Diode Conduction)a

IS

3.2

1.3

Single Avalanche Current

L = 0 1 mH

IAS

3.5

Single Avalanche Energy

L = 0.1 mH

EAS

0.6

mJ

Maximum Power Dissipationa

TA = 25_C

PD

3.8

1.5

W

Maximum Power Dissipationa

TA = 70_C

PD

2.0

0.8

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

26

33

Maximum Junction-to-Ambienta

Steady State

RthJA

65

81

_C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.9

2.4

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

类似零件编号 - SI7820DN

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7820DN	532Kb / 12P	N-Channel 200 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI7820DN	532Kb / 12P	N-Channel 200 V (D-S) MOSFET 01-Jan-2022

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类似说明 - SI7820DN

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