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TPC8211 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 TPC8211
功能描述  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPC8211 数据表(HTML) 2 Page - Toshiba Semiconductor

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TPC8211
2003-02-18
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
83.3
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
114
Single-device operation
(Note 3a)
Rth (ch-a) (1)
167
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2)
278
°C/W
Marking (Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 5.5 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6:
· on lower left of the marking indicates Pin 1.
FR-4
25.4
´ 25.4 ´ 0.8
(unit: mm)
(a)
FR-4
25.4
´ 25.4 ´ 0.8
(unit: mm)
(b)
Type
TPC8211
Lot No.
Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)


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