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ST730C16L3 数据表(PDF) 3 Page - International Rectifier |
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ST730C16L3 数据表(HTML) 3 Page - International Rectifier |
3 / 8 page ST730C..L Series 3 www.irf.com Bulletin I25191 rev. D 04/03 dv/dt Maximum critical rate of rise of off-state voltage I DRM Max. peak reverse and off-state I RRM leakage current Blocking 500 V/ µsT J = T J max. linear to 80% rated V DRM Parameter ST730C..L Units Conditions 80 mA T J = T J max, rated V DRM /V RRM applied P GM Maximum peak gate power 10.0 T J = T J max, t p ≤ 5ms P G(AV) Maximum average gate power 2.0 T J = T J max, f = 50Hz, d% = 50 I GM Max. peak positive gate current 3.0 A T J = T J max, t p ≤ 5ms +V GM Maximum peak positive gate voltage -V GM Maximum peak negative gate voltage T J = - 40°C mA T J = 25°C T J = 125°C T J = - 40°C VT J = 25°C T J = 125°C I GD DC gate current not to trigger 10 mA Parameter ST730C..L Units Conditions 20 5.0 Triggering TYP. MAX. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - V GD DC gate voltage not to trigger 0.25 V Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied T J = T J max Max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied V GT DC gate voltage required to trigger I GT DC gate current required to trigger W V T J = T J max, t p ≤ 5ms T J Max. operating temperature range -40 to 125 T stg Max. storage temperature range -40 to 150 R thJ-hs Max. thermal resistance, 0.073 DC operation single side cooled junction to heatsink 0.031 DC operation double side cooled R thC-hs Max. thermal resistance, 0.011 DC operation single side cooled case to heatsink 0.006 DC operation double side cooled F Mounting force, ± 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Parameter ST730C..L Units Conditions K/W °C Case style TO - 200AC (B-PUK) See Outline Table K/W Thermal and Mechanical Specification |
类似零件编号 - ST730C16L3 |
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类似说明 - ST730C16L3 |
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