SLG59M1713V datasheet(12/18 Pages) DIALOG

部件名	SLG59M1713V

功能描述	An Ultra-small, 4 m廓, 2 A Integrated Power Switch with Multiple Protection Features

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制造商	DIALOG [Dialog Semiconductor]

网页	http://www.dialog-semiconductor.com/

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12 / 18 page

000-0059M1713-100

Page 12 of 18

SLG59M1713V

SLG59M1713V Start-up Inrush Current Considerations with Capacitive Loads (continued)

Power Dissipation

The junction temperature of the SLG59M1713V depends on different factors such as board layout, ambient temperature, and

other environmental factors. The primary contributor to the increase in the junction temperature of the SLG59M1713V is the power

dissipation of its power MOSFET. Its power dissipation and the junction temperature in nominal operating mode can be calculated

using the following equations:

where:

PD = Power dissipation, in Watts (W)

RDSON = Power MOSFET ON resistance, in Ohms (Ω)

IDS = Output current, in Amps (A)

and

where:

TJ = Junction temperature, in Celsius degrees (°C)

θJA = Package thermal resistance, in Celsius degrees per Watt (°C/W)

TA = Ambient temperature, in Celsius degrees (°C)

Figure 3. A SLG59M1713V with CSLEW set to 15nF and 470µF retained for CLOAD.

CLOAD-to-CSLEW ratio is smaller than 33,600. Note smooth VOUT transition.

PD = RDSON x IDS2

TJ = PD x θJA + TA

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Renesas Technology Corp	SLG59M1713V	1Mb / 30P	An Ultra-small, 4 mΩ, 2 A Load Switch with Multiple Protection Features 3-Feb-2022

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