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TLPGU53D 数据表(PDF) 2 Page - Toshiba Semiconductor |
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TLPGU53D 数据表(HTML) 2 Page - Toshiba Semiconductor |
2 / 9 page TLGU53T,TLGU53C,TLGU53D,TLPGU53T,TLPGU53C,TLPGU53D 2002-01-17 2 Electrical and Optical Characteristics (Ta ==== 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name ld lP Dl IF Min Typ. IF Typ. Max IF Max VR TLGU53T 571 (574) 17 20 47.6 170 20 2.1 2.4 20 50 4 TLGU53C 571 (574) 17 20 47.6 150 20 2.1 2.4 20 50 4 TLGU53D 571 (574) 17 20 27.2 80 20 2.1 2.4 20 50 4 TLPGU53T 558 (562) 14 20 27.2 80 20 2.1 2.4 20 50 4 TLPGU53C 558 (562) 14 20 27.2 70 20 2.1 2.4 20 50 4 TLPGU53D 558 (562) 14 20 15.3 40 20 2.1 2.4 20 50 4 Unit nm mA mcd mA V mA mA V Precautions Please be careful of the following: · Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) · If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. · This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
类似零件编号 - TLPGU53D |
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类似说明 - TLPGU53D |
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