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TC581282AXB 数据表(PDF) 5 Page - Toshiba Semiconductor

部件名 TC581282AXB
功能描述  128-MBIT (16M X 8 BITS) CMOS NAND E2PROM
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TC581282AXB 数据表(HTML) 5 Page - Toshiba Semiconductor

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TC581282AXB
2001-12-04
5/31
PROGRAMMING AND ERASING CHARACTERISTICS (Ta
==== −
−−−40° to 85°C, VCC ==== 2.7 V to 3.6 V)
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NOTES
tPROG
Programming Time
200 to 300
1000
µs
N
Number of Programming Cycles on Same
Page
3
(1)
tBERASE
Block Erasing Time
2
10
ms
(1): Refer to Application Note (12) toward the end of this document.


类似零件编号 - TC581282AXB

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类似说明 - TC581282AXB

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Toshiba Semiconductor		 TC58128AFT TOSHIBA-TC58128AFT Datasheet
617Kb / 33P		    128-MBIT (16M 횞 8 BITS) CMOS NAND E2PROM
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345Kb / 33P		    256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
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1Mb / 38P		    32 MBIT (4M X 8 BITS) CMOS NAND E2PROM
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1Mb / 36P		    16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
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649Kb / 68P		    128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
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622Kb / 69P		    128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY
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TC58V64BDC TOSHIBA-TC58V64BDC Datasheet
345Kb / 33P		    64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
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1Mb / 32P		    128Mbit (16M x 8bit) CMOS NAND E2PROM
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