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TC55VEM416AXBN55 数据表(PDF) 10 Page - Toshiba Semiconductor |
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TC55VEM416AXBN55 数据表(HTML) 10 Page - Toshiba Semiconductor |
10 / 14 page TC55VEM416AXBN55 2002-08-29 10/14 WRITE CYCLE 4 ( , CONTROLLED) (See Note 4) Note: (1) R/W remains HIGH for the read cycle. (2) If CE1 (or UB or LB ) goes LOW(or CE2 goes HIGH) coincident with or after R/W goes LOW, the outputs will remain at high impedance. (3) If CE1 (or UB or LB ) goes HIGH(or CE2 goes LOW) coincident with or before R/W goes HIGH, the outputs will remain at high impedance. (4) If OE is HIGH during the write cycle, the outputs will remain at high impedance. (5) Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied. UB LB R/W tWC tAS tWR tWP 1 CE VALID DATA IN tDS tDH Hi-Z Hi-Z tCW CE2 tBW tBE tCOE tODW UB , LB tCW (See Note 5) Address A0~A19 DOUT I/O1~16 DIN I/O1~16 |
类似零件编号 - TC55VEM416AXBN55 |
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类似说明 - TC55VEM416AXBN55 |
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