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TC55V4000ST-70 数据表(PDF) 4 Page - Toshiba Semiconductor |
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TC55V4000ST-70 数据表(HTML) 4 Page - Toshiba Semiconductor |
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4 / 10 page  TC55V4000ST-70,-85 2001-11-30 4/10 AC CHARACTERISTICS AND OPERATING CONDITIONS (Ta ==== −−−−40° to 85°C, VDD ==== 2.7 to 3.6 V) READ CYCLE TC55V4000ST -70 -85 SYMBOL PARAMETER MIN MAX MIN MAX UNIT tRC Read Cycle Time 70 85 tACC Address Access Time 70 85 tCO Chip Enable Access Time 70 85 tOE Output Enable Access Time 35 45 tCOE Chip Enable Low to Output Active 5 5 tOEE Output Enable Low to Output Active 0 0 tOD Chip Enable High to Output High-Z 30 35 tODO Output Enable High to Output High-Z 30 35 tOH Output Data Hold Time 10 10 ns WRITE CYCLE TC55V4000ST -70 -85 SYMBOL PARAMETER MIN MAX MIN MAX UNIT tWC Write Cycle Time 70 85 tWP Write Pulse Width 50 55 tCW Chip Enable to End of Write 60 70 tAS Address Setup Time 0 0 tWR Write Recovery Time 0 0 tODW R/W Low to Output High-Z 25 35 tOEW R/W High to Output Active 0 0 tDS Data Setup Time 30 35 tDH Data Hold Time 0 0 ns AC TEST CONDITIONS PARAMETER TEST CONDITION Output load 30 pF + 1 TTL Gate Input pulse level 0.4 V, 2.4 V Timing measurements VDD × 0.5 Reference level VDD × 0.5 tR, tF 5 ns |
类似零件编号 - TC55V4000ST-70 |
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类似说明 - TC55V4000ST-70 |
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