SUD25N04-25 datasheet(2/4 Pages) VISHAY

部件名	SUD25N04-25

功能描述	N-Channel 40-V (D-S) 175C MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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SUD25N04-25

Vishay Siliconix

www.vishay.com

2-2

Document Number: 71129

S-04558—Rev. B, 27-Aug-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

40

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

2.0

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 40 V, VGS = 0 V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 40 V, VGS = 0 V, TJ = 125_C

50

mA

DSS

VDS = 40 V, VGS = 0 V, TJ = 175_C

150

m

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

50

A

VGS = 10 V, ID = 25 A

0.02

0.025

VGS = 10 V, ID = 25 A, TJ = 125_C

0.040

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 10 V, ID = 25 A, TJ = 175_C

0.053

W

VGS = 4.5 V, ID = 10 A

0.031

0.040

Forward Transconductanceb

gfs

VDS = 15 V, ID = 25 A

15

S

Dynamica

Input Capacitance

Ciss

510

Output Capacitance

Coss

VGS = 0 V, VDS = 25 V, F = 1 MHz

125

pF

Reverse Transfer Capacitance

Crss

65

Total Gate Chargec

Qg

13

20

Gate-Source Chargec

Qgs

VDS = 20 V, VGS = 10 V, ID = 25 A

2.5

nC

Gate-Drain Chargec

Qgd

DS

GS

D

3

Turn-On Delay Timec

td(on)

5

10

Rise Timec

tr

VDD = 20 V, RL = 0.8 W

47

70

Turn-Off Delay Timec

td(off)

VDD = 20 V, RL = 0.8 W

ID ^ 25 A, VGEN = 10 V, RG = 2.5 W

15

30

ns

Fall Timec

tf

5

10

Source-Drain Diode Ratings and Characteristic (TC = 25_C)

Pulsed Current

ISM

50

A

Diode Forward Voltageb

VSD

IF = 25 A, VGS = 0 V

1.1

1.3

V

Source-Drain Reverse Recovery Time

trr

IF = 25 A, di/dt = 100 A/ms

17

30

ns

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

c.

Independent of operating temperature.

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SUD25N04-25 数据表(PDF) 2 Page - Vishay Siliconix

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类似零件编号 - SUD25N04-25

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